|Date||October 24, 2013|
|Time||3:30 - 5:00 pm|
|Location||207 Rogers Engineering & Computer Science Building|
Error Correcting Codes (ECC) are successfully used to combat errors in Computer Memory Systems for several decades. Examples of such techniques include simple SEC-DED codes in memory ICís to powerful techniques such as Reed-Solomon codes used in CD-ROMís. Recent advances in flash memory technology renders their use not only as USB devices, but also as solid state drives in application platforms such as servers, laptops, and main memories. In this presentation, we review the error mechanisms in NAND flash memories and some techniques to combat the errors.
Dr. Murali Varanasi received his Bachelorís degrees in Physics and Electronics Engineering from Andhra University and Madras Institute of Technology respectively. He has received his M.S. and Ph.D. degrees in Electrical Engineering from the University of Maryland. He served as a faculty member at Old Dominion University and as Chairman at University of South Florida and University of North Texas. He also served as a program director for at the National Science Foundation (NSF). Varanasi is a Fellow of CSAB, and IEEE.
|Publisher||zz (old) School of Engineering & Computer Science|
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