|Date||November 7, 2012||Time||4:00 - 5:00 pm|
|Location||Baylor Sciences Building, Room E.125|
Mid-Infrared Semiconductor Lasers: Recent Advances and Future Pursuits
While scientists pursue three primary semiconductor systems to generate mid-infrared (3–5 ìm) laser radiation, antimonide-based heterostructures that employ an indirect (type-II) quantum well configuration have proved to be the most promising approach in this wavelength range. However, there remain challenges in this system in achieving excellent performance at high operating temperatures. Recent results in optical pumping of type-II antimonide-based semiconductor lasers with W-shaped quantum wells willbe presented, as will new projects employing electrically injected interband cascade lasers as well as semiconductor lasers with integrated graphene transparent contacts. These projects have a common theme designed to reveal the optoelectronic mechanisms that limit high temperature operation in antimonide-based type-II W lasers.
For more information, please contact: Dr. Anzhong Wang (254) 710-2276
|Publisher||Department of Physics|
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